DocumentCode :
534039
Title :
Influence of aperiodicity of nanoscale structures on the resistance
Author :
Mazinov, A.S. ; Bakhov, V.A. ; Karavainikov, A.V.
Author_Institution :
Crimea Sci. Center, Ukraine Acad. of Sci., Ukraine
fYear :
2010
fDate :
13-17 Sept. 2010
Firstpage :
840
Lastpage :
841
Abstract :
Nano-scale devices are considered as an aperiodic structure based on a crystalline material. For the proposed approach the approach for quantum conductivity of materials is grounded, when the change in resistance of semiconductor working layers is determined by the concentration of free carriers generated by periodic and aperiodic power budget.
Keywords :
electric resistance; electrical conductivity; nanotechnology; aperiodic power budget; aperiodic structure; aperiodicity; crystalline material; free carriers; nanoscale devices; nanoscale structures; quantum conductivity; resistance; semiconductor working layers; Amorphous materials; Electric potential; Electronic mail; Magnetic properties; Nanoscale devices; Resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
Type :
conf
DOI :
10.1109/CRMICO.2010.5632863
Filename :
5632863
Link To Document :
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