DocumentCode :
534073
Title :
Monte Carlo simulation of electron scattering processes by ionized impurity in conductive channels of micro- and nanodevice structures
Author :
Borzdov, V.M. ; Speransky, D.S.
Author_Institution :
Belarusian State Univ., Minsk, Belarus
fYear :
2010
fDate :
13-17 Sept. 2010
Firstpage :
867
Lastpage :
868
Abstract :
Effective algorithm of polar angle θ selection in semiconductor ionized impurity scattering simulation according to the Ridley model is proposed. As an example, doped bulk silicon angle distribution histograms for various values of impurity concentration Ni and various values of electrons energy E are presented.
Keywords :
Monte Carlo methods; impurity scattering; impurity states; nanotechnology; polar semiconductors; semiconductor doping; Monte Carlo simulation; Ridley model; conductive channel; doped bulk silicon angle distribution histogram; electron energy; electron scattering process; impurity concentration; microdevice structure; nanodevice structure; polar angle selection; semiconductor ionized impurity scattering simulation; Equations; Histograms; Impurities; Mathematical model; Monte Carlo methods; Nickel; Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
Type :
conf
DOI :
10.1109/CRMICO.2010.5632933
Filename :
5632933
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=534073
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