• DocumentCode
    534073
  • Title

    Monte Carlo simulation of electron scattering processes by ionized impurity in conductive channels of micro- and nanodevice structures

  • Author

    Borzdov, V.M. ; Speransky, D.S.

  • Author_Institution
    Belarusian State Univ., Minsk, Belarus
  • fYear
    2010
  • fDate
    13-17 Sept. 2010
  • Firstpage
    867
  • Lastpage
    868
  • Abstract
    Effective algorithm of polar angle θ selection in semiconductor ionized impurity scattering simulation according to the Ridley model is proposed. As an example, doped bulk silicon angle distribution histograms for various values of impurity concentration Ni and various values of electrons energy E are presented.
  • Keywords
    Monte Carlo methods; impurity scattering; impurity states; nanotechnology; polar semiconductors; semiconductor doping; Monte Carlo simulation; Ridley model; conductive channel; doped bulk silicon angle distribution histogram; electron energy; electron scattering process; impurity concentration; microdevice structure; nanodevice structure; polar angle selection; semiconductor ionized impurity scattering simulation; Equations; Histograms; Impurities; Mathematical model; Monte Carlo methods; Nickel; Scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-7184-3
  • Type

    conf

  • DOI
    10.1109/CRMICO.2010.5632933
  • Filename
    5632933
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=534073