DocumentCode
534081
Title
Account of surface charge and scattering in two-band model of RTD
Author
Abramov, I.I. ; Goncharenko, I.A. ; Kolomejtseva, N.V.
Author_Institution
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
872
Lastpage
873
Abstract
The influence of the surface charge and scattering on epy electrical characteristics of RTD based on GaAs/AlAs was investigated with the use of combined two-band model. Sufficient agreement of the results with the experimental data was obtained.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; resonant tunnelling diodes; surface charging; surface scattering; GaAs-AlAs; RTD; combined two-band model; epy electrical characteristics; surface charge; surface scattering; Gallium arsenide; Mathematical model; Nanoscale devices; Numerical models; Optical scattering; Optical surface waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632942
Filename
5632942
Link To Document