Title :
Electrically programmed tellurium based thin-film memory element
Author :
Kolosnitsin, B.S.
Author_Institution :
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
Abstract :
Transition of thin film memory element based on tellurium in a metastable state with quasimetallic conductivity is followed by structural transformations, which leads to a charge ordering of electron density as a result of reallocation of atoms with different valences. The memory effects in these structures are conditioned by cooperative effects of interacting dipole complexes.
Keywords :
electric charge; electron density; elemental semiconductors; semiconductor thin films; tellurium; atom reallocation; charge ordering; electron density; interacting dipole complexes; memory effect; metastable state; quasimetallic conductivity; structural transformation; thin film memory element; Conductivity; Electric potential; Electronic mail; Fluctuations; Ions; Materials; Tellurium;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632948
