DocumentCode
534092
Title
Simulation memory cell based on tunnel magnetoresistance effect
Author
Kostrov, I.A. ; Stempitsky, R.V.
Author_Institution
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
878
Lastpage
879
Abstract
The design of the spin memory cell on tunnel magnetoresistance effect in a magnetic tunnel junction is presented. The dynamic behavioral model and spice-macromodel of a spin memory cell are developed for using in computer simulation systems. The simulation results in static and dynamic modes have shown acceptable accuracy and adequacy of the models in comparison with the experiment.
Keywords
magnetoelectronics; semiconductor storage; tunnelling magnetoresistance; computer simulation systems; magnetic tunnel junction; spin memory cell; tunnel magnetoresistance effect; Hardware design languages; Integrated circuit modeling; Magnetic hysteresis; Magnetic tunneling; Magnetoresistance; Mathematical model; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632956
Filename
5632956
Link To Document