Title :
Electron drift velocity in PHEMT
Author :
Ayzenshtat, G.I. ; Bozhkov, V.G. ; Yushchenko, A.Y.
Author_Institution :
Res. Inst. of Semicond. Devices, Tomsk, Russia
Abstract :
The temperature dependence of drift velocity-field characteristics of two-dimensional electron gas in AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor is determined. The saturation drift velocity in AlGaAs/InGaAs quantum well reduces from 1.55·107 to 1.3·107 cm/sec in a temperature range from 200 to 400K.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor quantum wells; two-dimensional electron gas; AlGaAs-InGaAs; PHEMT; drift velocity-field characteristics; electron drift velocity; pseudomorphic high electron mobility transistor; quantum well; saturation drift velocity; temperature 200 K to 400 K; temperature dependence; two-dimensional electron gas; Electron mobility; Electronic mail; Gallium arsenide; Indium gallium arsenide; PHEMTs; Temperature dependence; Temperature distribution;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632957
