Title :
Electrophysical and mechanical characteristics of metal — Nanostructured p-Si contacts with Schottky barrier
Author :
Smyntyna, A.V. ; Kulinich, A.O. ; Yatsunskiy, R.I. ; Marchuk, A.I.
Author_Institution :
Odessa Nat. I. I. Mechnikov Univ., Odessa, Ukraine
Abstract :
Current-voltage characteristics of metal-nanostructured p silicon structure, which was received by the chemical machining in etchant Si layers superficial at SiO2-Si structures, are investigated in the present work. It is established that current depends on electrical voltage according to I~U2. It confirms the injection character of these currents. Reverse current is influenced on by properties of potential Schottky barrier.
Keywords :
Schottky barriers; electrical contacts; etching; silicon; silicon compounds; Schottky barrier; SiO2-Si; chemical machining; current-voltage characteristics; electrophysical characteristics; etchant Si layers; mechanical characteristics; metal-nanostructured p silicon structure; metal-nanostructured p-Si contacts; reverse current; Current-voltage characteristics; Electric potential; Electronic mail; Schottky barriers; Silicon;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632962
