DocumentCode
534108
Title
Co-planar Ka-band monolithic amplifiers based on domestic GaAs mHEMT process
Author
Cherkashin, M.V. ; Dmitrienko, K.S. ; Kokolov, A.A. ; Dobush, I.M. ; Salnikov, A.S. ; Fedorov, Yu.V. ; Sheyerman, F.I. ; Babak, L.I.
Author_Institution
Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
137
Lastpage
138
Abstract
The design of Ka-band single- and two-stage monolithic coplanar amplifiers (CAs) based on the domestic 0.15 μm GaAs mHEMT technology is presented.
Keywords
III-V semiconductors; MMIC amplifiers; field effect MIMIC; field effect MMIC; gallium arsenide; high electron mobility transistors; millimetre wave amplifiers; GaAs; co-planar Ka-band monolithic amplifier; domestic GaAs mHEMT process; monolithic coplanar amplifier; size 0.15 mum; Electronic mail; Gain; Gallium arsenide; Integrated circuit modeling; Logic gates; Mobile communication; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632973
Filename
5632973
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