Title :
Co-planar Ka-band monolithic amplifiers based on domestic GaAs mHEMT process
Author :
Cherkashin, M.V. ; Dmitrienko, K.S. ; Kokolov, A.A. ; Dobush, I.M. ; Salnikov, A.S. ; Fedorov, Yu.V. ; Sheyerman, F.I. ; Babak, L.I.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk, Russia
Abstract :
The design of Ka-band single- and two-stage monolithic coplanar amplifiers (CAs) based on the domestic 0.15 μm GaAs mHEMT technology is presented.
Keywords :
III-V semiconductors; MMIC amplifiers; field effect MIMIC; field effect MMIC; gallium arsenide; high electron mobility transistors; millimetre wave amplifiers; GaAs; co-planar Ka-band monolithic amplifier; domestic GaAs mHEMT process; monolithic coplanar amplifier; size 0.15 mum; Electronic mail; Gain; Gallium arsenide; Integrated circuit modeling; Logic gates; Mobile communication; mHEMTs;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632973
