Features of formation of active areas of n-p-n-transistors for submicronic integrated microcircuits

Formation of active areas of n-p-n-transistors for submicronic integrated microcircuits was investigated at scaling carrying out. It was shown, that reduction of energy and doze of base doping allows increasing a direct coefficient of amplification of n-p-n-transistor and reducing amount of RTA processes. An optimum mode of emitter doping for reception of necessary values of direct coefficient of current amplification of n-p-n- transistor is use of the doping doze 600 μC/cm² at energy of P⁺ ions 20-30 keV.