• DocumentCode
    534120
  • Title

    Monolithic integrated circuit of limiters on basis of p-i-n diodes

  • Author

    Yushchenko, A.Y. ; Monastyrev, E.A. ; Ayzenshtat, G.I. ; Bozhkov, V.G. ; Akimov, A.V.

  • Author_Institution
    Res. Inst. of Semicond. Devices, Tomsk, Russia
  • fYear
    2010
  • fDate
    13-17 Sept. 2010
  • Firstpage
    153
  • Lastpage
    154
  • Abstract
    The paper presents the design and performance of broadband monolithic GaAs p-i-n diode limiter. MIC has low-signal insertion loss. The leakage power of the limiter is about 16.5 dBm and it can handle CW power level up to 37 dBm.
  • Keywords
    III-V semiconductors; gallium arsenide; limiters; monolithic integrated circuits; p-i-n diodes; GaAs; broadband monolithic p-i-n diode limiter; leakage power; low-signal insertion loss; monolithic integrated circuit; Gallium arsenide; Insertion loss; MMICs; P-i-n diodes; Performance evaluation; Semiconductor device measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-7184-3
  • Type

    conf

  • DOI
    10.1109/CRMICO.2010.5632986
  • Filename
    5632986
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=534120