Title :
Monolithic integrated circuit of limiters on basis of p-i-n diodes
Author :
Yushchenko, A.Y. ; Monastyrev, E.A. ; Ayzenshtat, G.I. ; Bozhkov, V.G. ; Akimov, A.V.
Author_Institution :
Res. Inst. of Semicond. Devices, Tomsk, Russia
Abstract :
The paper presents the design and performance of broadband monolithic GaAs p-i-n diode limiter. MIC has low-signal insertion loss. The leakage power of the limiter is about 16.5 dBm and it can handle CW power level up to 37 dBm.
Keywords :
III-V semiconductors; gallium arsenide; limiters; monolithic integrated circuits; p-i-n diodes; GaAs; broadband monolithic p-i-n diode limiter; leakage power; low-signal insertion loss; monolithic integrated circuit; Gallium arsenide; Insertion loss; MMICs; P-i-n diodes; Performance evaluation; Semiconductor device measurement;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632986
