Title :
On using of a stop-layer for thermal conduction increasing in devices based on GaAs
Author :
Galdetskiy, A.V. ; Vorobiev, A.A.
Author_Institution :
FSUE Istok, Fryazino, Russia
Abstract :
A design of an active device on GaAs with a stop-layer under an active structure is proposed. It makes possible to implement effective heat removing through the filled well from the wafer bottom. Simulation has shown doubling of thermal conductance.
Keywords :
III-V semiconductors; gallium arsenide; heat conduction; microwave devices; GaAs; active device; active structure; stop-layer; thermal conduction; Electronic mail; Facsimile; Gallium arsenide; Gallium nitride; HEMTs; Heating; Thermal conductivity;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632987
