Title :
A SRAM-Based FTL Design in Solid State Drives Using Block Associative Mechanism
Author :
Bo, Li ; Changsheng, Xie ; Chen, Lu ; Fen, Wang
Author_Institution :
Dept. of Comput., Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
When Solid state drives began to enter our life and gradually became the mainstream device in the storage industry. Some issues incur the people attention in pursuit of optimal performance. This paper proposed an on-chip SRAM-based FTL design to improve the efficiency of the SSD random write and reduce the amount of erasure operations. By simulation experiments of SSDsim, we demonstrated the efficiency of our design. At the end of this paper, I gave our future directions in this work.
Keywords :
SRAM chips; flash memories; SSDsim; block associative mechanism; flash translation layer design; on-chip SRAM; solid state drives; storage industry; Computer architecture; Drives; File systems; Layout; Optimization; Random access memory; Solids; FTL; Lifetime; Solid state drives; mapping mechanism;
Conference_Titel :
Information Technology and Applications (IFITA), 2010 International Forum on
Conference_Location :
Kunming
Print_ISBN :
978-1-4244-7621-3
Electronic_ISBN :
978-1-4244-7622-0
DOI :
10.1109/IFITA.2010.349