DocumentCode
534301
Title
The current-voltage characteristics of SiC Schottky barrier diodes with the self-heating included
Author
Janke, W. ; Hapka, A.
Author_Institution
Koszalin Univ. of Technol., Koszalin, Poland
fYear
2010
fDate
6-8 Oct. 2010
Firstpage
1
Lastpage
3
Abstract
The measurements of isothermal and non-isothermal DC characteristics of SiC Schottky barrier diodes are presented in this paper. Various electro-thermal models for I-V characteristics calculation are proposed. The calculations of non-isothermal characteristics of SiC SBD´s in the wide range of forward voltage are shown. The self-heating phenomenon, as an electro thermal positive feedback is discussed. The critical current and junction temperature estimation for SiC SBD is explained.
Keywords
Schottky barriers; Schottky diodes; heating; silicon compounds; thermal analysis; wide band gap semiconductors; Schottky barrier diode; SiC; current-voltage characteristics; electro thermal model; electro thermal positive feedback; non-isothermal DC characteristic; self heating; Current measurement; Junctions; Resistance; Schottky diodes; Silicon carbide; Temperature; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal Investigations of ICs and Systems (THERMINIC), 2010 16th International Workshop on
Conference_Location
Barcelona
Print_ISBN
978-1-4244-8453-9
Type
conf
Filename
5636293
Link To Document