DocumentCode :
5346
Title :
A Horseshoe Micromachined Resonant Magnetic Field Sensor With High Quality Factor
Author :
Weiguan Zhang ; Lee, J.E.-Y.
Author_Institution :
Dept. of Electron. Eng., City Univ. of Hong Kong, Hong Kong, China
Volume :
34
Issue :
10
fYear :
2013
fDate :
Oct. 2013
Firstpage :
1310
Lastpage :
1312
Abstract :
We report a magnetic field sensor shaped in the form of a horseshoe silicon micromechanical resonator. Through coupling a pair of resonating tines on one end, we are able to achieve a Q of 14 400. This benefits the field sensitivity of the device, which has a linear dependence on the mechanical displacement of the tines that is caused by a Lorentz force. The strength of the magnetic field density is thus inferred from the mechanical displacement. The device has a measured sensitivity of 4.6 mm/(A·T), which agrees well with the proposed analytical model. By scaling the dimensions of the device to a lateral size similar to that of other referenced works based on similar principles, the model predicts a tenfold improvement in sensitivity in comparison. The enhancement is due to the higher Q, achieved by merit of the novel device topology.
Keywords :
Q-factor; magnetic field measurement; magnetic sensors; micromechanical resonators; Lorentz force; field sensitivity; horseshoe silicon micromechanical resonator; magnetic field density; magnetic field sensor; mechanical displacement; novel device topology; resonating tines; Current measurement; Lorentz covariance; Magnetic hysteresis; Magnetic resonance; Magnetometers; Q-factor; Sensitivity; High quality factor; horseshoe resonator; magnetic field sensor; microelectromechanical systems (MEMS);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2278031
Filename :
6595578
Link To Document :
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