Subthreshold Swing Reduction by Double Exponential Control Mechanism in an MOS Gated-MIS Tunnel Transistor

Author

Chien-Shun Liao ; Jenn-Gwo Hwu

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

62

Issue

6

fYear

2015

fDate

Jun-15

Firstpage

2061

Lastpage

2065

Abstract

The current of an MIS tunnel diode was tremendously changed (about five orders) while sweeping the gate bias of an MOS capacitor nearby. It was supposed that the effective Schottky barrier height of the MIS tunnel diode was affected by the bias of the nearby MOS gate capacitor via changing the minority carrier distribution at the fringe of the MIS tunnel diode. Therefore, the subthreshold behavior of the MIS tunnel diode current was controlled by the voltage bias of the nearby MOS capacitor, which is called MOS gated-MIS tunnel transistor. The minimum subthreshold swing of the MOS gated-MIS tunnel transistor could reach 15.3 mV/decade empirically.

Keywords

MOS capacitors; Schottky barriers; minority carriers; tunnel diodes; tunnel transistors; MIS tunnel diode; MOS gate capacitor; MOS gated-MIS tunnel transistor; Schottky barrier height; double exponential control mechanism; minority carrier distribution; subthreshold swing reduction; Capacitors; Logic gates; Schottky barriers; Schottky diodes; Transistors; Tunneling; MIS tunnel diode; MOS structure; Schottky barrier height modulation; oxide tunneling; subthreshold swing (SS) reduction; subthreshold swing (SS) reduction.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2424245

Filename

7101836