Subthreshold Swing Reduction by Double Exponential Control Mechanism in an MOS Gated-MIS Tunnel Transistor

The current of an MIS tunnel diode was tremendously changed (about five orders) while sweeping the gate bias of an MOS capacitor nearby. It was supposed that the effective Schottky barrier height of the MIS tunnel diode was affected by the bias of the nearby MOS gate capacitor via changing the minority carrier distribution at the fringe of the MIS tunnel diode. Therefore, the subthreshold behavior of the MIS tunnel diode current was controlled by the voltage bias of the nearby MOS capacitor, which is called MOS gated-MIS tunnel transistor. The minimum subthreshold swing of the MOS gated-MIS tunnel transistor could reach 15.3 mV/decade empirically.