DocumentCode :
535756
Title :
Emission efficiency of crystalline and amorphous Si nanoclusters
Author :
Torchynska, T.V.
Author_Institution :
ESFM - Nat. Polytech. Inst., Mexico City, Mexico
Volume :
01
fYear :
2010
fDate :
11-13 Oct. 2010
Firstpage :
99
Lastpage :
102
Abstract :
The paper presents the results of emission efficiency comparison in crystalline and amorphous Si nanoclustes. Using X-ray diffraction (XRD) and photoluminescence (PL) methods the correlation between different PL bands and the volumes of Si nanocrystals and an amorphous (a-Si:H) phase have been revealed The size parameters of amorphous (a-Si:H) nanoclusters (quantum dots) and Si nanocrystals have been estimated from PL study and have been compared in the last case with that obtained by the XRD method. Using PL results the ratio between emission efficiencies for crystalline (ηcr) and amorphous (ηam) nanoclusters has been obtained and discussed.
Keywords :
X-ray diffraction; amorphous semiconductors; elemental semiconductors; hydrogen; nanostructured materials; photoluminescence; semiconductor quantum dots; silicon; Si:H; X-ray diffraction; XRD; a-Si:H; amorphous nanoclusters; crystalline nanoclusters; emission efficiency; photoluminescence; quantum dots; size parameters; Films; Nanocrystals; Quantum dots; Silicon; Temperature measurement; X-ray diffraction; X-ray scattering; X-ray diffraction; emission efficiency; silicon crystalline and amorphous nanoclusters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-5783-0
Type :
conf
DOI :
10.1109/SMICND.2010.5650229
Filename :
5650229
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=535756
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