Title :
Influence of preparation method on structural properties of GeSiO nanosystems
Author :
Stavarache, Ionel ; Lepadatu, Ana-Maria ; Teodorescu, Valentin ; Stoica, Tionica ; Pasuk, Iuliana ; Stan, George ; Iancu, Vladimir ; Ciurea, Magdalena Lidia
Author_Institution :
Nat. Inst. of Mater. Phys., Magurele, Romania
Abstract :
GeSiO nanosystems were obtained using two different preparation methods, sol-gel and magnetron-sputtering. Transmission electron microscopy measurements were performed to investigate the films structure. Amorphous and crystalline Ge dots embedded in amorphous silicon dioxide were observed. The Ge concentration in the GeSiO films was by Energy-dispersive X-ray spectroscopy.
Keywords :
amorphous state; elemental semiconductors; germanium; nanofabrication; nanostructured materials; semiconductor growth; semiconductor quantum dots; silicon compounds; sol-gel processing; sputter deposition; thin films; transmission electron microscopy; Ge-SiO; amorphous dots; amorphous silicon dioxide; crystalline dots; energy-dispersive X-ray spectroscopy; film structure; films; magnetron-sputtering; nanosystems; sol-gel; structural properties; transmission electron microscopy; Amorphous magnetic materials; Annealing; Films; Nanocrystals; Silicon; Sputtering; Substrates; Dots; TEM; magnetron sputtering; sol-gel;
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-5783-0
DOI :
10.1109/SMICND.2010.5650255
