Micromachining and nanoprocessing of GaN/Silicon for SAW and UV photodetector manufacturing

Author

Müller, A. ; Konstantinidis, G. ; Neculoiu, D. ; Dinescu, A. ; Andrulidaki, M. ; Stavrinidis, A. ; Cismaru, A. ; Stefanescu, A. ; Carp, M. ; Anton, C. ; Müller, A.A. ; Gavrila, R. ; Dascalu, D.

Author_Institution

IMT-Bucharest, Bucharest, Romania

Volume

01

fYear

2010

fDate

11-13 Oct. 2010

Firstpage

265

Lastpage

268

Abstract

The paper presents the manufacturing and the characterization of two novel devices on GaN/Si. The first device is a SAW structure for the GHz frequency range manufactured using nanolithografic techniques on GaN. Fingers and intedigits spacing 300nm wide have been successful developed in a single metal PMMA layer. An operating frequency close to 4 GHz has been obtained. For the second device, a membrane supported MSM UV photodetector on GaN, both micromachining techniques and nanolithography have been used. The MSM interdigitated structure of the photodetector had 500nm wide fingers/spacings. A very high responsivity (about 10 A/W for 6V) and the very low dark current (<;1pA for V=3V) have been obtained.

Keywords

III-V semiconductors; gallium compounds; nanolithography; silicon compounds; wide band gap semiconductors; GHz frequency range; GaN; SAW photodetector; UV photodetector; micromachining; nanolithografic techniques; nanoprocessing; Biomembranes; Fingers; Gallium nitride; Manufacturing; Photodetectors; Silicon; Surface acoustic waves; E-beam lithography; GaN; SAW devices; UV photodetector; microwaves;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2010 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-5783-0

Type

conf

DOI

10.1109/SMICND.2010.5650290

Filename

5650290