DocumentCode
535766
Title
V-shape through wafer via manufactured by drie variable isotropy process
Author
Vasilache, D. ; Colpo, S. ; Ronchin, S. ; Giacomozzi, F. ; Margesin, B.
Author_Institution
FBK-irst Trento, Trento, Italy
Volume
01
fYear
2010
fDate
11-13 Oct. 2010
Firstpage
235
Lastpage
238
Abstract
A new process for through-wafer interconnects was studied by our group. This new process was developed to facilitate metallised through wafer via holes manufacturing. V-shape profile can contribute to an easier metallisation process and better adhesion. Manufacturing process use the possibility to change the isotropy in the Deep Reactive Ion Etching (DRIE) equipments from anisotropic to completely isotropic. Two slightly different processes were used in order optimize the technology and to see the changes introduced by isotropic/anisotropic processes sequence.
Keywords
adhesion; interconnections; metallisation; semiconductor device manufacture; sputter etching; DRIE variable isotropy process; V-shape through wafer via; adhesion; deep reactive ion etching; metallisation; through-wafer interconnects; wafer via holes manufacturing; Adhesives; Etching; Oxidation; Passivation; Plasmas; Silicon; DRIE; through silicon via; variable isotropy process;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2010 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-5783-0
Type
conf
DOI
10.1109/SMICND.2010.5650440
Filename
5650440
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