• DocumentCode
    535766
  • Title

    V-shape through wafer via manufactured by drie variable isotropy process

  • Author

    Vasilache, D. ; Colpo, S. ; Ronchin, S. ; Giacomozzi, F. ; Margesin, B.

  • Author_Institution
    FBK-irst Trento, Trento, Italy
  • Volume
    01
  • fYear
    2010
  • fDate
    11-13 Oct. 2010
  • Firstpage
    235
  • Lastpage
    238
  • Abstract
    A new process for through-wafer interconnects was studied by our group. This new process was developed to facilitate metallised through wafer via holes manufacturing. V-shape profile can contribute to an easier metallisation process and better adhesion. Manufacturing process use the possibility to change the isotropy in the Deep Reactive Ion Etching (DRIE) equipments from anisotropic to completely isotropic. Two slightly different processes were used in order optimize the technology and to see the changes introduced by isotropic/anisotropic processes sequence.
  • Keywords
    adhesion; interconnections; metallisation; semiconductor device manufacture; sputter etching; DRIE variable isotropy process; V-shape through wafer via; adhesion; deep reactive ion etching; metallisation; through-wafer interconnects; wafer via holes manufacturing; Adhesives; Etching; Oxidation; Passivation; Plasmas; Silicon; DRIE; through silicon via; variable isotropy process;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2010 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4244-5783-0
  • Type

    conf

  • DOI
    10.1109/SMICND.2010.5650440
  • Filename
    5650440