DocumentCode
535770
Title
A novel concept for low drift chemical sensing at micro and nano-scale
Author
Cobianu, Cornel ; Serban, Bogdan ; Georgescu, Ion ; Costea, Stefan ; Bostan, Cazimir
Author_Institution
Sensors & Wireless Lab. Bucharest, Honeywell Romania srl, Bucharest, Romania
Volume
01
fYear
2010
fDate
11-13 Oct. 2010
Firstpage
217
Lastpage
220
Abstract
It is the purpose of this paper to present a novel generic concept for low drift chemical sensing which is applicable at micro and nanometer scale, based on a new, all-differential approach. At micrometer level, our principle is explained by means of surface acoustic wave (SAW) chemical sensing, while at nano level, we are using the resonant sensing principle to develop our genuine differential concept. Unlike the traditional differential approaches based on functionalized sensing layer in the sensing loop, and on a uncoated surface in the reference loop, our all differential concept provides a better response subtraction between the two paths, as the sensing loop consists of a functionalized sensing layer, as before, but, the reference loop consists of a functionalized non-sensing layer, with the same ageing and humidity behavior as the sensing layer. Twinned electronic reading is used for both loops, and thus all the common mode signals are subtracted in the differential reading, assuring the minimum base line drift of the sensor. Preliminary results of all differential sensor response to humidity and temperature variations are shown for the SAW sensors, with the sensor signal kept independent of their changes.
Keywords
ageing; chemical sensors; humidity; nanosensors; surface acoustic wave sensors; SAW; ageing; differential approaches; functionalized nonsensing layer; functionalized sensing layer; humidity; low-drift chemical sensing; micrometer level; reference loop; resonant sensing principle; surface acoustic wave chemical sensing; twinned electronic reading; Aging; Chemicals; Humidity; Oscillators; Surface acoustic waves; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2010 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-5783-0
Type
conf
DOI
10.1109/SMICND.2010.5650518
Filename
5650518
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