Title :
Sub-micron FBAR modeling including FEM simulations
Author :
Stefanescu, A. ; Neculoiu, D. ; Konstantinidis, G. ; Cismaru, A. ; Deligeorgis, G. ; Stavrinidis, A. ; Muller, A.
Author_Institution :
IMT Bucharest, Bucharest, Romania
Abstract :
Analytical and finite element models of sub-micron Film Bulk Acoustic Resonator (FBAR) based on GaN are reported. The analytical modelling is based on Mason´s model for three composite layer FBAR structure. The numerical modelling shows good agreement with theoretical and experimental results previously obtained on FBAR operating around 6 GHz.
Keywords :
III-V semiconductors; acoustic resonators; finite element analysis; gallium compounds; wide band gap semiconductors; FEM simulations; GaN; film bulk acoustic resonator; finite element models; numerical modelling; submicron FBAR modeling; Analytical models; Electrodes; Film bulk acoustic resonators; Finite element methods; Gallium nitride; Numerical models; Resonant frequency; FBAR; FEM simulation; Mason´s model;
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-5783-0
DOI :
10.1109/SMICND.2010.5650610
