Theoretical Analysis of Dielectric Modulated Drift Region for Si Power Devices

Author

Jiuyang Zhou ; Chih-Fang Huang ; Yen-Hsin Chen

Author_Institution

Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

36

Issue

4

fYear

2015

fDate

Apr-15

Firstpage

378

Lastpage

380

Abstract

This letter presents a theoretical analysis of the dielectric modulated drift region in Si power devices. By inserting multiple dielectric columns in the drift region the tradeoff between the breakdown voltage (BV) and the specific ON-resistance (R_ON,sp) can be significantly improved. An analytical model for the electric field distribution and breakdown voltage of this structure is derived and a methodology is proposed for identifying the optimal BV-R_ON,sp tradeoff. The 2-D numerical simulations are conducted to verify the accuracy of the proposed model.

Keywords

dielectric materials; electric breakdown; elemental semiconductors; power semiconductor devices; silicon; Si; breakdown voltage; dielectric column; dielectric modulated drift region; electric field distribution; silicon power device; specific on-resistance; theoretical analysis; Analytical models; Dielectrics; Electric fields; Numerical models; Object recognition; Schottky diodes; Silicon; Analytical modeling; dielectric; power device; silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2400457

Filename

7031857