DocumentCode :
53645
Title :
Sol-Gel-Based Highly Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet Photodiodes
Author :
Yadav, Aniruddh Bahadur ; Pandey, Amritanshu ; Somvanshi, Divya ; Jit, Satyabrata
Author_Institution :
Dept. of Electron. Eng., IIT Varanasi, Varanasi, India
Volume :
62
Issue :
6
fYear :
2015
fDate :
Jun-15
Firstpage :
1879
Lastpage :
1884
Abstract :
High-performance ultraviolet (UV) Schottky photodiodes obtained by growing Pd Schottky contacts on the sol-gel-derived n-ZnO thin films deposited on n-Si substrates have been reported in this paper. The current-voltage (I-V) measurements of the as-fabricated Schottky photodiodes show an excellent room temperature contrast ratio (i.e., the ratio of the current under UV illumination to the dark current) of ~5.332 × 103 and responsivity (i.e., the parameter characterizing the sensitivity of the device to the UV light) of ~8.39 A/W at -5 V reverse bias voltage, respectively; when the device is illuminated by an UV source of ~650 μW output power at ~ 365 nm. The measured room temperature contrast ratio and responsivity are believed to be the highest among the reported values in the literature for ZnO thin film-based Schottky photodiodes using sol-gel method.
Keywords :
II-VI semiconductors; Schottky barriers; Schottky diodes; palladium; photodiodes; semiconductor thin films; sol-gel processing; wide band gap semiconductors; zinc compounds; I-V measurements; Pd-ZnO; Schottky contacts; Si; UV illumination; current-voltage measurements; high-performance ultraviolet Schottky photodiodes; n-silicon Schottky ultraviolet photodiodes; room temperature contrast ratio; sol-gel-based highly sensitive Pd/n-ZnO thin film Schottky ultraviolet photodiodes; temperature 293 K to 298 K; voltage -5 V; Charge carrier processes; Detectors; Photodiodes; Schottky diodes; Substrates; Temperature measurement; Zinc oxide; Schottky diode; sol-gel method; thin film; thin film.;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2423322
Filename :
7101846
Link To Document :
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