Title :
A 2G/3G/4G SAW-Less Receiver Front-End Adopting Switchable Front-End Architecture
Author :
Kuduck Kwon ; Junghwan Han
Author_Institution :
Samsung Electron. Co. Ltd., Suwon, South Korea
Abstract :
In this paper, a surface acoustic wave (SAW)-less receiver (RX) front-end adopting switchable front-end architecture has been presented for second-generation/third-generation/fourth-generation cellular applications. Depending on the RX-transmitter (TX) frequency separation, a favorable down-mixing architecture is selected between a current-sampling mixer and a voltage-sampling mixer. The proposed switchable architecture meets the specification of an input-referred second-order intercept point (IIP2) for the SAW-less RX while minimizing the power consumption. The implemented RX front-end consists of a wideband capacitor cross-coupled common-gate low-noise amplifier, a 25% duty-cycle passive mixer with IIP2 calibration circuitry, a baseband transconductor, and a trans-impedance amplifier. Fabricated in a 65-nm CMOS process, the SAW-less RX front-end provides conversion gain of 42 dB, and achieves noise figure of below 3.3 dB, out-of-band input-referred third-order intercept point of -2 dBm, and IIP2 of more than 56 dBm. It draws an average current of 14.8 mA from 1.2 V. The die area is 1.71 mm2.
Keywords :
3G mobile communication; 4G mobile communication; CMOS analogue integrated circuits; low noise amplifiers; mixers (circuits); operational amplifiers; radio receivers; CMOS process; IIP2 calibration circuitry; RX-Tx frequency separation; RX-transmitter frequency separation; SAWless receiver front-end; baseband transconductor; conversion gain; current 14.8 mA; current-sampling mixer; down-mixing architecture; fourth-generation cellular application; gain 42 dB; input-referred second-order intercept point; noise figure; out-of-band input-referred third-order intercept point; passive mixer; power consumption minimization; second-generation cellular application; size 65 nm; surface acoustic waveless receiver front-end; switchable front-end architecture; third-generation cellular application; transimpedance amplifier; voltage 1.2 V; voltage-sampling mixer; wideband capacitor cross-coupled common-gate low-noise amplifier; Baseband; Gain; Impedance; Mixers; Noise; Radio frequency; Switches; CMOS; WCDMA; input-referred second-order intercept point (IIP2); long-term evolution (LTE); low-noise amplifier (LNA); passive mixer; receiver (RX); surface acoustic wave (SAW)-less; trans-impedance amplifier (TIA);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2014.2326616