InAs/GaAs Quantum Dot Lasers on Silicon-on-Insulator Substrates by Metal-Stripe Wafer Bonding

Author

Yuan-Hsuan Jhang ; Tanabe, Katsuaki ; Iwamoto, Satoshi ; Arakawa, Yasuhiko

Author_Institution

Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan

Volume

27

Issue

8

fYear

2015

fDate

April15, 15 2015

Firstpage

875

Lastpage

878

Abstract

InAs/GaAs quantum dot (QD) lasers on silicon-on-insulator substrates with Si rib structures are fabricated by metal-stripe wafer bonding, where the metal strips work not only as the bonding layer but also as electrodes. Our Fabry-Pérot lasers operate with a threshold current density of 520 A · cm^-2 for the broad-area laser, and a threshold current of 110 mA for the ridge laser. The bonded lasers exhibit an InAs QD ground-state lasing at 1.3 μm at room temperature.

Keywords

Fabry-Perot resonators; III-V semiconductors; gallium arsenide; ground states; indium compounds; integrated optics; laser beams; optical fabrication; quantum dot lasers; silicon-on-insulator; wafer bonding; Fabry-Pérot lasers; InAs QD ground-state lasing; InAs-GaAs; InAs/GaAs quantum dot lasers; Si; Si rib structures; bonding layer; broad-area laser; current 110 mA; electrodes; metal strips; metal-stripe wafer bonding; ridge laser; silicon-on-insulator substrates; temperature 293 K to 298 K; threshold current density; wavelength 1.3 mum; Bonding; Gallium arsenide; Metals; Quantum dot lasers; Silicon; Substrates; Wafer bonding; photonic integrated circuits; semiconductor quantum dot laser; silicon photonics;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2015.2398465

Filename

7031862