DocumentCode
537480
Title
Theoretical Calculation and Application of Ga1-xlnxN Micro System
Author
Tang Lili ; Wang Chunbo
Author_Institution
Dept. of Comput. Sci., Zhixing Coll. of Hubei Univ., Wuhan, China
fYear
2010
fDate
7-9 Nov. 2010
Firstpage
1
Lastpage
4
Abstract
For the rich indium material GaInN ternary alloys, the manufacturing technology has become mature, but there is still larger space for the research on the modeling of their physical characteristic. Among the material band gap that emitting wavelength directly related to and their corresponding bending coefficient (bowing parameter), the lattice constant, bond lengths, and components, there are small theoretical study at home and abroad at present, but since the fact that these physical properties have a certain impact on the craft itself, so this paper uses the Materials Studio Software based on first principles to analyze the relationships among the band gaps and their corresponding lattice constant, the bond length, the bowing parameter and the components on the basis of the previous method. Comparing the simulated with the experimental data, the results showed that all the simulated band gaps value are in good agreement with the previous researches.
Keywords
indium alloys; manufacturing systems; Ga1-xlnxN micro system; GaInN ternary alloys; bending coefficient; bond lengths; lattice constant; manufacturing technology; material band gap; materials studio software; theoretical calculation; Crystals; Data models; Gallium nitride; Indium; Lattices; Photonic band gap;
fLanguage
English
Publisher
ieee
Conference_Titel
E-Product E-Service and E-Entertainment (ICEEE), 2010 International Conference on
Conference_Location
Henan
Print_ISBN
978-1-4244-7159-1
Type
conf
DOI
10.1109/ICEEE.2010.5661537
Filename
5661537
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