• DocumentCode
    537480
  • Title

    Theoretical Calculation and Application of Ga1-xlnxN Micro System

  • Author

    Tang Lili ; Wang Chunbo

  • Author_Institution
    Dept. of Comput. Sci., Zhixing Coll. of Hubei Univ., Wuhan, China
  • fYear
    2010
  • fDate
    7-9 Nov. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    For the rich indium material GaInN ternary alloys, the manufacturing technology has become mature, but there is still larger space for the research on the modeling of their physical characteristic. Among the material band gap that emitting wavelength directly related to and their corresponding bending coefficient (bowing parameter), the lattice constant, bond lengths, and components, there are small theoretical study at home and abroad at present, but since the fact that these physical properties have a certain impact on the craft itself, so this paper uses the Materials Studio Software based on first principles to analyze the relationships among the band gaps and their corresponding lattice constant, the bond length, the bowing parameter and the components on the basis of the previous method. Comparing the simulated with the experimental data, the results showed that all the simulated band gaps value are in good agreement with the previous researches.
  • Keywords
    indium alloys; manufacturing systems; Ga1-xlnxN micro system; GaInN ternary alloys; bending coefficient; bond lengths; lattice constant; manufacturing technology; material band gap; materials studio software; theoretical calculation; Crystals; Data models; Gallium nitride; Indium; Lattices; Photonic band gap;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    E-Product E-Service and E-Entertainment (ICEEE), 2010 International Conference on
  • Conference_Location
    Henan
  • Print_ISBN
    978-1-4244-7159-1
  • Type

    conf

  • DOI
    10.1109/ICEEE.2010.5661537
  • Filename
    5661537