DocumentCode :
537480
Title :
Theoretical Calculation and Application of Ga1-xlnxN Micro System
Author :
Tang Lili ; Wang Chunbo
Author_Institution :
Dept. of Comput. Sci., Zhixing Coll. of Hubei Univ., Wuhan, China
fYear :
2010
fDate :
7-9 Nov. 2010
Firstpage :
1
Lastpage :
4
Abstract :
For the rich indium material GaInN ternary alloys, the manufacturing technology has become mature, but there is still larger space for the research on the modeling of their physical characteristic. Among the material band gap that emitting wavelength directly related to and their corresponding bending coefficient (bowing parameter), the lattice constant, bond lengths, and components, there are small theoretical study at home and abroad at present, but since the fact that these physical properties have a certain impact on the craft itself, so this paper uses the Materials Studio Software based on first principles to analyze the relationships among the band gaps and their corresponding lattice constant, the bond length, the bowing parameter and the components on the basis of the previous method. Comparing the simulated with the experimental data, the results showed that all the simulated band gaps value are in good agreement with the previous researches.
Keywords :
indium alloys; manufacturing systems; Ga1-xlnxN micro system; GaInN ternary alloys; bending coefficient; bond lengths; lattice constant; manufacturing technology; material band gap; materials studio software; theoretical calculation; Crystals; Data models; Gallium nitride; Indium; Lattices; Photonic band gap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
E-Product E-Service and E-Entertainment (ICEEE), 2010 International Conference on
Conference_Location :
Henan
Print_ISBN :
978-1-4244-7159-1
Type :
conf
DOI :
10.1109/ICEEE.2010.5661537
Filename :
5661537
Link To Document :
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