Title :
A double-vortex magnetic memory cell
Author :
Ruotolo, Antonio ; Wang, N. ; Wang, Xiongfei
Author_Institution :
Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong SAR, Hong Kong, China
Abstract :
A non-volatile memory bit-cell for solid-state data storage is proposed. The core of the cell is an elongated magnetic dot, accommodating two magnetic vortices and a magnetic flower at remanence. The flower is switched between two stable positions, geometrically defined, by an electrical current flowing perpendicular to the dot plane. Switching currents as small as ~ 10 μA are demonstrated by micromagnetic simulations.
Keywords :
memory architecture; random-access storage; dot plane; double-vortex magnetic memory cell; elongated magnetic dot; magnetic vortices; micromagnetic simulation; non-volatile memory bit-cell; solid-state data storage; Magnetic moments; Random access memory; Switches; Magnetic devices; Magnetic vortices; Magnetoresistance; Solid state drives;
Conference_Titel :
APMRC, 2010 Digest
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-8103-3
