Novel Gate-All-Around High-Voltage Thin-Film Transistor With T-Shaped Metal Field Plate Design

Author

Jhen-Yu Tsai ; Hsin-Hui Hu

Author_Institution

Dept. of Electron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan

Volume

62

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

882

Lastpage

887

Abstract

A novel gate-all-around (GAA) high-voltage thin-film transistor (HVTFT) with the T-shaped metal field plate (MFP) design results in a high breakdown voltage (V_BD) of 119.9 V and a low specific ON-resistance (R_SP) of 8.4 mQ · cm². This T-shaped MFP GAA HVTFT solves the V_BD-R_SP tradeoff problems and exhibits superior gate control performance, which leads to excellent electrical characteristics such as a better ON/OFF ratio of >10¹⁰ and a lower subthreshold slope of 154.4 mV/decade than the conventional planar structure.

Keywords

electric breakdown; thin film transistors; GAA HVTFT; MFP design; T-shaped metal field plate design; V_BD-R_SP tradeoff problem; breakdown voltage; gate-all-around high-voltage thin-film transistor; low specific ON-resistance; planar structure; superior gate control performance; voltage 119.9 V; Computational modeling; Electric breakdown; Logic gates; Metals; Semiconductor process modeling; Thin film transistors; Gate-all-around (GAA); high-voltage thin-film transistor (HVTFT); metal field plate (MFP); metal field plate (MFP).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2395878

Filename

7031875