IPD broadband balun design for GSM applications

Author

Chen, Kuan-Yu ; Fang, Bo-Xiang ; Yeh, Hsiao-Hua

Author_Institution

Adv. Product Design & Testing Dept., Siliconware Precision Ind. Co., Taichung, Taiwan

fYear

2010

fDate

7-9 Dec. 2010

Firstpage

1

Lastpage

4

Abstract

This paper presents the integrated passive device (IPD) broadband balun design by second-order lattice type topology for GSM applications. Analytical expressions of inductance and capacitance values are derived from ABCD matrix with easy making lump element values evaluated accurately. Finally, the two broadband baluns are designed based on silicon substrate for the theory´s demonstration which exhibit the amplitude difference lower than 0.8 dB, insertion loss better than -0.8 dB and phase delay difference located at 180 +/- 4 degrees from the frequency of 0.8 GHz ~ 1 GHz and 1.5 ~ 2.1 GHz covering all GSM low/high band.

Keywords

baluns; cellular radio; matrix algebra; silicon; ABCD matrix; GSM applications; IPD broadband balun design; Si; capacitance values; frequency 0.8 GHz to 1 GHz; frequency 1.5 GHz to 2.1 GHz; inductance values; integrated passive device; lump element values; second-order lattice type topology; Delay; GSM; Impedance matching; Low pass filters; Microwave communication; Microwave filters; Shunt (electrical);

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Design of Advanced Packaging & Systems Symposium (EDAPS), 2010 IEEE

Conference_Location

Singapore

ISSN

2151-1225

Print_ISBN

978-1-4244-9068-4

Electronic_ISBN

2151-1225

Type

conf

DOI

10.1109/EDAPS.2010.5683043

Filename

5683043