DocumentCode :
539367
Title :
300mm wafer stain formation by Spin Etching
Author :
Sato, Keisuke ; Mashimoto, Satomi ; Watanabe, Masaharu
Author_Institution :
Lam Research, Bunkyo-ku, Tokyo, Japan
fYear :
2008
fDate :
27-29 Oct. 2008
Firstpage :
308
Lastpage :
310
Abstract :
Stain film (Porous Silicon Layer) is formed by Spin Etching at room temperature. It is formed on single side of a wafer. It has a potential an insulation layer.
Keywords :
Etching; Films; Image color analysis; Insulation; Oxidation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location :
Tokyo, Japan
ISSN :
1523-553X
Electronic_ISBN :
1523-553X
Type :
conf
Filename :
5714884
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=539367
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