DocumentCode :
539393
Title :
Focus and CD control by scatterometry measurements for 65/45nm node devices
Author :
Kawachi, Toshihide ; Fudo, Hidekimi ; Yamashita, Shigenori ; Yamamoto, Keizo ; Morinaga, Kazunori ; Matsumoto, Shunichi ; Miwa, Toshiharu
Author_Institution :
Renesas Technology Corp., 751 Horiguchi, Hitachinaka City, Ibraki 312-8504, Japan
fYear :
2008
fDate :
27-29 Oct. 2008
Firstpage :
283
Lastpage :
286
Abstract :
Focus and CD simultaneous control method using scatterometry has been developed. Our focus and CD measurement technique consists of five layers scatterometry model that achieves the stable focus measurement at the exposure dose fluctuation. We utilize this feature and consider applying to the RSM (Response Surface Method) model for the focus and CD control. This control realizes a focus optimization and calculates the correct dose allowed for the focus effect. We´ve confirmed this method realizing high accuracy PR (Photo Resist) shape control and obtaining the CD variation reduction effect to 1/5 at the 65nm device.
Keywords :
Accuracy; Finite element methods; Fluctuations; Production; Radar measurements; Resists; Shape;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location :
Tokyo, Japan
ISSN :
1523-553X
Electronic_ISBN :
1523-553X
Type :
conf
Filename :
5714914
Link To Document :
بازگشت