DocumentCode
539393
Title
Focus and CD control by scatterometry measurements for 65/45nm node devices
Author
Kawachi, Toshihide ; Fudo, Hidekimi ; Yamashita, Shigenori ; Yamamoto, Keizo ; Morinaga, Kazunori ; Matsumoto, Shunichi ; Miwa, Toshiharu
Author_Institution
Renesas Technology Corp., 751 Horiguchi, Hitachinaka City, Ibraki 312-8504, Japan
fYear
2008
fDate
27-29 Oct. 2008
Firstpage
283
Lastpage
286
Abstract
Focus and CD simultaneous control method using scatterometry has been developed. Our focus and CD measurement technique consists of five layers scatterometry model that achieves the stable focus measurement at the exposure dose fluctuation. We utilize this feature and consider applying to the RSM (Response Surface Method) model for the focus and CD control. This control realizes a focus optimization and calculates the correct dose allowed for the focus effect. We´ve confirmed this method realizing high accuracy PR (Photo Resist) shape control and obtaining the CD variation reduction effect to 1/5 at the 65nm device.
Keywords
Accuracy; Finite element methods; Fluctuations; Production; Radar measurements; Resists; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location
Tokyo, Japan
ISSN
1523-553X
Electronic_ISBN
1523-553X
Type
conf
Filename
5714914
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