Approach of continuous device reliability improvement activity in manufacturing stage

In order to achieve built-in reliability in manufacturing stage, we employed combined methodology of FMEA and MAIC steps. By systematic evaluation, we successfully isolate the influential process parameter on NMOSFET degradation caused by Hot Carrier Injection on the occasion of new fab-line set-up. Subsequent investigation and physical analysis elucidate the degradation mechanism and enable us to define appropriate process control range. Grasping and controlling of critical process parameter are indispensable to avoid process fluctuation that can cause product reliability deficiency.