• DocumentCode
    539409
  • Title

    Lithography hotspot discovery at 70nm DRAM 300mm fab: Process Window Qualification using Design Base Binning

  • Author

    Yen, Ray ; Chen, Daniel ; Cheng, Mingjen ; Lan, Andy ; Chen, Damian ; Ghaskadvi, Rajesh ; Chang, Ellis

  • Author_Institution
    Inotera Memories, Inc, 667, Fuhsing 3 Rd., Hwa-Ya Technology Park, Kueishan, Taoyuan, Taiwan
  • fYear
    2008
  • fDate
    27-29 Oct. 2008
  • Firstpage
    7
  • Lastpage
    10
  • Abstract
    Identifying hotspots - structures that limit the lithography process window - become increasingly important as the industry relies heavily on RET to print subwavelength designs. KLA-Tencor´s patented Process Window Qualification (PWQ) methodology has been used for this purpose in various fabs. PWQ methodology has three key advantages (a) PWQ Layout - to obtain the best sensitivity (b) Design Based Binning - for pattern repeater analysis (c) Intelligent sampling - for the best DOI sampling rate. This paper evaluates two different analysis stratagies for SEM review sampling successfully deployed at Inotera Memories, Inc. We propose a new approach combining the location repeater and pattern repeaters. Based on a recent case study the new sampling flow reduces the data analysis and sampling time from 6 hours to 1.5 hour maintaining maximum DOI sample rate.
  • Keywords
    Inspection; Layout; Lithography; Modulation; Numerical analysis; Repeaters; Systematics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM), 2008 International Symposium on
  • Conference_Location
    Tokyo, Japan
  • ISSN
    1523-553X
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • Filename
    5714930