DocumentCode :
539409
Title :
Lithography hotspot discovery at 70nm DRAM 300mm fab: Process Window Qualification using Design Base Binning
Author :
Yen, Ray ; Chen, Daniel ; Cheng, Mingjen ; Lan, Andy ; Chen, Damian ; Ghaskadvi, Rajesh ; Chang, Ellis
Author_Institution :
Inotera Memories, Inc, 667, Fuhsing 3 Rd., Hwa-Ya Technology Park, Kueishan, Taoyuan, Taiwan
fYear :
2008
fDate :
27-29 Oct. 2008
Firstpage :
7
Lastpage :
10
Abstract :
Identifying hotspots - structures that limit the lithography process window - become increasingly important as the industry relies heavily on RET to print subwavelength designs. KLA-Tencor´s patented Process Window Qualification (PWQ) methodology has been used for this purpose in various fabs. PWQ methodology has three key advantages (a) PWQ Layout - to obtain the best sensitivity (b) Design Based Binning - for pattern repeater analysis (c) Intelligent sampling - for the best DOI sampling rate. This paper evaluates two different analysis stratagies for SEM review sampling successfully deployed at Inotera Memories, Inc. We propose a new approach combining the location repeater and pattern repeaters. Based on a recent case study the new sampling flow reduces the data analysis and sampling time from 6 hours to 1.5 hour maintaining maximum DOI sample rate.
Keywords :
Inspection; Layout; Lithography; Modulation; Numerical analysis; Repeaters; Systematics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location :
Tokyo, Japan
ISSN :
1523-553X
Electronic_ISBN :
1523-553X
Type :
conf
Filename :
5714930
Link To Document :
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