DocumentCode :
539412
Title :
In-line metrology for the 45 nm and 32 nm nodes
Author :
Allgair, John ; Bunday, Benjamin ; Cordes, Aaron ; Lipscomb, Pete ; Godwin, Milt ; Vartanian, Victor ; Bishop, Michael ; Arazi, Doron ; Kim, Kye-Weon
Author_Institution :
International SEMATECH Manufacturing Initiative (ISMI)/AMD assignee, Austin, TX, USA
fYear :
2008
fDate :
27-29 Oct. 2008
Firstpage :
65
Lastpage :
68
Abstract :
Successful in-line metrology is imperative for a fab to achieve profitable production yields. Full functionality and high circuit speed are achieved only through control of defectivity and tight distributions of feature sizes. In-line monitoring of applicable metrics is key to ensuring success and is also used to fine-tune production processes for improved yield and circuit speed. Metrology has now become an inherent part of mission-critical production processes. This article gives a high-level overview of the findings of the ISMI metrology program and details some of the major approaching manufacturing challenges.
Keywords :
Image edge detection; Inspection; Manufacturing; Metrology; Semiconductor device measurement; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location :
Tokyo, Japan
ISSN :
1523-553X
Electronic_ISBN :
1523-553X
Type :
conf
Filename :
5714933
Link To Document :
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