• DocumentCode
    539416
  • Title

    Study on gas replacement time in plasma process chamber for realizing ideal down flow of gas without disturbance

  • Author

    Morishita, Sadaharu ; Goto, Tetsuya ; Ito, Takashi ; Ohmi, Tadahiro

  • Author_Institution
    EES Technology Dept. Technology Development Center HQ, Industrial Automation Co., OMRON Corporation, Tokyo 141-0032, Japan
  • fYear
    2008
  • fDate
    27-29 Oct. 2008
  • Firstpage
    177
  • Lastpage
    180
  • Abstract
    Precise and the high-speed replacement of various gas species in the plasma process chamber become increasingly very important in order to realize high-quality continuous multi-processes using various gas species in a single plasma process chamber with high throughput in various industry manufacturing fields such as semiconductor devices, flat panel displays (FPD), solar cells and so on. In a microwave-excited high-density and low-electron temperature plasma process equipment with a dual-shower-plate structure, uniform down-flow of gas in the chamber is essential to realize this. Thus, the upper shower plate for down-flow supply of gas plays an important role. It has been confirmed that, in the case of the replacement of N2 by Ar, the short replacement time of around 2 seconds in the cases of 133 Pa, 66.7 Pa, 13.3 Pa and 6.67 Pa can be achieved by using the upper shower plate having 1200 holes. The upper shower plate has advantageous effect for high-speed gas replacement due to precise down-flow of gas.
  • Keywords
    Argon; Fluid flow; Fluid flow measurement; Microwave devices; Plasmas; Pressure measurement; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM), 2008 International Symposium on
  • Conference_Location
    Tokyo, Japan
  • ISSN
    1523-553X
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • Filename
    5714937