• DocumentCode
    539420
  • Title

    Achieving high gate quality by wet process improvement

  • Author

    Yasu, Masakazu ; Ohbayashi, Eiji ; Fukui, Yoshitaka ; Ichii, Mariko

  • Author_Institution
    Omron Corporation, Yasu, Shiga, Japan
  • fYear
    2008
  • fDate
    27-29 Oct. 2008
  • Firstpage
    319
  • Lastpage
    322
  • Abstract
    The charge to breakdown (Qbd) is one of the important gate oxide reliability characteristics. This paper describes Qbd problem we experienced before and its mechanism. One is the resist contamination during dry step in oxide wet etch for split gate. Resist reacts with IPA during IPA dry, and it causes Qbd degradation. Another is longer waiting time in DI water rinse step at gate oxide pre cleaning. Longer waiting time in rinse has the possibility to make Qbd worse.
  • Keywords
    Contamination; Degradation; Logic gates; Plasmas; Reliability; Resists; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM), 2008 International Symposium on
  • Conference_Location
    Tokyo, Japan
  • ISSN
    1523-553X
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • Filename
    5714941
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=539420