• DocumentCode
    539423
  • Title

    Application of quality engineering for Cu damascene etching

  • Author

    Oda, Yusuke ; Nishizawa, Atsushi ; Murashima, Shigenobu

  • Author_Institution
    NEC Electronics Corporation, Sagamihara, Kanagawa, JAPAN
  • fYear
    2008
  • fDate
    27-29 Oct. 2008
  • Firstpage
    323
  • Lastpage
    326
  • Abstract
    It was tried to apply quality engineering for optimizing of Cu damascene etching. It attempted that etching parameters were adjusted to improve the within-wafer variation of both trench CD and trench depth by dynamic-S/N ratio analysis. Finally we got the optimal etching conditions which significantly improved the within-wafer variation of trench CD and depth.
  • Keywords
    Arrays; Copper; Etching; Fluid flow; Gain; Optical variables measurement; Semiconductor device measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM), 2008 International Symposium on
  • Conference_Location
    Tokyo, Japan
  • ISSN
    1523-553X
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • Filename
    5714944
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=539423