• DocumentCode
    539425
  • Title

    Enhancing electrical properties of nickel silicide by using spike anneal as the second rapid thermal anneal

  • Author

    Futase, Takuya ; Okada, Shigenari ; Hashikawa, Naoto ; Kamino, Yutaka ; Inaba, Yutaka ; Fujiwara, Tetsuo ; Suzuki, Tadashi ; Yamamoto, Hirohiko ; Kozawa, Hidehiko

  • Author_Institution
    Renesas Technology Corp., 751 Horiguchi, Hitachinaka, Ibaraki, 312-0034, Japan
  • fYear
    2008
  • fDate
    27-29 Oct. 2008
  • Firstpage
    313
  • Lastpage
    316
  • Abstract
    To create a nickel monosilicide (NiSi) film with superior electrical properties, two-step rapid thermal annealing (RTA) was optimized. Using in-situ chemical dry cleaning and increasing initial RTA temperature makes it possible to macroscopically transform nickel into NiSi without causing oxygen-contamination problems. Nevertheless, the Ni2Si remaining on the top surface of the NiSi degrades its electrical properties. Accordingly, to microscopically enhance the integrity of the NiSi, the second RTA was also optimized. It was found that using a spike anneal for the second RTA completely transforms the residual Ni2Si into NiSi, thereby enhancing the electrical properties of NiSi in 65-nm-node logic devices.
  • Keywords
    Annealing; Cleaning; Films; Nickel; Resistance; Silicidation; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Manufacturing (ISSM), 2008 International Symposium on
  • Conference_Location
    Tokyo, Japan
  • ISSN
    1523-553X
  • Electronic_ISBN
    1523-553X
  • Type

    conf

  • Filename
    5714946
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=539425