Title :
BPSG boron spike generation investigated by chamber pressure monitoring
Author :
Yokota, Toshiya ; Yamaura, Takamichi ; Orikasa, Kuniaki ; Higashimoto, Masayuki ; Ishida, Akihiko
Author_Institution :
Spansion, Japan
Abstract :
Mechanism of boron spike generation in BPSG film is discussed. Process chamber pressure traces are monitored when individual source gases are introduced. Changes in BPSG dopant profile due to differing chamber conditions can be identified by a simple method of monitoring the chamber pressure level. The mechanism of the boron spike is explained. The chamber conditions can be controlled by altering PSG pre-coat time to prevent boron spikes
Keywords :
Boron; Films; Gases; Monitoring; Process control; Silicon; Tungsten;
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location :
Tokyo, Japan
Electronic_ISBN :
1523-553X
