DocumentCode
539428
Title
BPSG boron spike generation investigated by chamber pressure monitoring
Author
Yokota, Toshiya ; Yamaura, Takamichi ; Orikasa, Kuniaki ; Higashimoto, Masayuki ; Ishida, Akihiko
Author_Institution
Spansion, Japan
fYear
2008
fDate
27-29 Oct. 2008
Firstpage
209
Lastpage
212
Abstract
Mechanism of boron spike generation in BPSG film is discussed. Process chamber pressure traces are monitored when individual source gases are introduced. Changes in BPSG dopant profile due to differing chamber conditions can be identified by a simple method of monitoring the chamber pressure level. The mechanism of the boron spike is explained. The chamber conditions can be controlled by altering PSG pre-coat time to prevent boron spikes
Keywords
Boron; Films; Gases; Monitoring; Process control; Silicon; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location
Tokyo, Japan
ISSN
1523-553X
Electronic_ISBN
1523-553X
Type
conf
Filename
5714949
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