Title :
High voltage gate oxide integrity for embedded Flash memory devices
Author :
Huang, Catherine Yan ; Moey, Mervyn Chin Boon ; Kuan, Marcus Hing Poh ; Dormans, Do ; Mukho, Madhusudan
Author_Institution :
System on Silicon Manufacturing Company Pte. Ltd, 70 Pasir Ris Industrial Drive 1, Singapore 519527
Abstract :
Gate oxide integrity (GOI) improvement for STI intensive structures of thick gate oxide is always a challenge when a high voltage devices process is integrated into an advanced Logic process with embedded stacked gate Flash memory. The improvement methods include STI top corner rounding (TCR) optimization by “passivation-dominant” dry etching etc was explored and reported here.
Keywords :
Charge pumps; Etching; Flash memory; Hafnium; Logic gates; Optimization; Silicon;
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location :
Tokyo, Japan
Electronic_ISBN :
1523-553X
