DocumentCode :
539440
Title :
From simulation to characterization - integrated approach for Self Aligned Double Patterning defectivity
Author :
Conley, Amiad ; Meshulach, Doron ; Gichon, Guy ; Dolev, Ido ; Perlovitch, Renana ; Landwer, Niv ; Ngai, Chris ; Cai, Man-Ping ; Miao, Liyan
Author_Institution :
Applied Materials, 9 Openheimer Street, Rehovot, Israel, 76705
fYear :
2008
fDate :
27-29 Oct. 2008
Firstpage :
11
Lastpage :
14
Abstract :
SADP (Self Aligned Double Patterning) is one of the major options to be implemented to bridge the lithography resolution gaps for 40 nm half pitch nodes and below. A natural concern for IC manufacturers when developing and/or implementing this kind of module is defectivity control strategy to ensure all defect sources are understood and an appropriate inspection strategy can be implemented to ensure high die yields. In this paper we will share a comprehensive study done to understand & characterize the major defect types in the SADP module developed by the Maydan Technology Center of Applied Materials. The implications of this work in terms of setting an optimized inspection strategy in the module will be discussed.
Keywords :
Bridges; Inspection; Mathematical model; Physics; Resists; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location :
Tokyo, Japan
ISSN :
1523-553X
Electronic_ISBN :
1523-553X
Type :
conf
Filename :
5714962
Link To Document :
بازگشت