DocumentCode :
539447
Title :
Yield enhancement through new solutions for queue time containment
Author :
Favre, Arnaud ; Bounouar, Julien ; Rioufrays, Sylvain ; Andre, Sandrine ; Courouble, Kristell ; Decamps, Pascal ; Rojat, Marilyn ; Houe, Jean-Francois ; Trenteseaux, Frederique
Author_Institution :
Emmanuelle Veran (Alcatel Vacuum Technology, 98 avenue de Brogny, F-74000 Annecy, France)
fYear :
2008
fDate :
27-29 Oct. 2008
Firstpage :
255
Lastpage :
257
Abstract :
Airborne molecular contamination (AMC) is responsible for crystalline defects and has an impact on final yield for 300 mm CMOS sub 90nm technology. In this paper, we describe our investigation on a vacuum purge system designed to suppress post etch issues. Moisture and volatile acids released in slot-to-slot space inside FOUP during queue time were found to be essential elements for crystal growth on patterned wafers. Vacuum purge was proven as the most efficient way to suppress those compounds in FOUP and on wafers. Results of this new containment method show successful and persistent crystal growth prevention as well as yield enhancement (up to 7%).
Keywords :
Contamination; Copper; Crystals; Etching; Moisture; Monitoring; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location :
Tokyo, Japan
ISSN :
1523-553X
Electronic_ISBN :
1523-553X
Type :
conf
Filename :
5714969
Link To Document :
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