DocumentCode
539447
Title
Yield enhancement through new solutions for queue time containment
Author
Favre, Arnaud ; Bounouar, Julien ; Rioufrays, Sylvain ; Andre, Sandrine ; Courouble, Kristell ; Decamps, Pascal ; Rojat, Marilyn ; Houe, Jean-Francois ; Trenteseaux, Frederique
Author_Institution
Emmanuelle Veran (Alcatel Vacuum Technology, 98 avenue de Brogny, F-74000 Annecy, France)
fYear
2008
fDate
27-29 Oct. 2008
Firstpage
255
Lastpage
257
Abstract
Airborne molecular contamination (AMC) is responsible for crystalline defects and has an impact on final yield for 300 mm CMOS sub 90nm technology. In this paper, we describe our investigation on a vacuum purge system designed to suppress post etch issues. Moisture and volatile acids released in slot-to-slot space inside FOUP during queue time were found to be essential elements for crystal growth on patterned wafers. Vacuum purge was proven as the most efficient way to suppress those compounds in FOUP and on wafers. Results of this new containment method show successful and persistent crystal growth prevention as well as yield enhancement (up to 7%).
Keywords
Contamination; Copper; Crystals; Etching; Moisture; Monitoring; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location
Tokyo, Japan
ISSN
1523-553X
Electronic_ISBN
1523-553X
Type
conf
Filename
5714969
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