DocumentCode
540360
Title
Measurement of integrated PA-to-LNA isolation on Si CMOS chip
Author
Minami, Ryo ; Hong, JeeYoung ; Imanishi, Daisuke ; Okada, Kenichi ; Matsuzawa, Akira
Author_Institution
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fYear
2010
fDate
7-10 Dec. 2010
Firstpage
1629
Lastpage
1632
Abstract
This paper shows measurement results of on-chip coupling between PA and LNA integrated on Si CMOS substrate, which is caused by substrate coupling, magnetic coupling, wire coupling, etc. These components are decomposed by measurements using diced chips. The result reveals that the substrate coupling is most dominant in CMOS chips and the total isolation becomes less than -50 dB with more than 0.4 mm PA-to-LNA distance.
Keywords
CMOS analogue integrated circuits; elemental semiconductors; low noise amplifiers; power amplifiers; silicon; CMOS chip; diced chips; integrated PA-to-LNA isolation measurement; magnetic coupling; on-chip coupling; substrate coupling; wire coupling; Couplings; Inductors; Noise; Noise measurement; Probes; Semiconductor device measurement; Substrates; CMOS amplifiers; Duplexers; Mutual coupling; Tx leakage; electromagnetic coupling; substrate coupling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location
Yokohama
Print_ISBN
978-1-4244-7590-2
Electronic_ISBN
978-1-902339-22-2
Type
conf
Filename
5728235
Link To Document