DocumentCode :
540444
Title :
Characterization of left-handed traveling-wave field effect transistors
Author :
Nakagawa, Shun ; Narahara, Koichi
Author_Institution :
Grad. Sch. of Sci. & Eng., Yamagata Univ., Yamagata, Japan
fYear :
2010
fDate :
7-10 Dec. 2010
Firstpage :
2311
Lastpage :
2314
Abstract :
In this study, we characterized left-handed (LH) traveling-wave field effect transistors (TWFETs) for achieving amplification of LH waves. We performed measurements of a test device and observed that attenuation of LH waves propagating along the electrode lines is successfully compensated for. The potential of LH TWFETs can cover the microwave applications, when implemented on printed-circuit boards or integrated circuits. This paper briefly reviews design criteria of LH TWFETs and describes experimental observations, together with calculated performance of the device.
Keywords :
field effect transistors; metamaterials; microwave transistors; LH waves propagation; electrode lines; integrated circuits; left-handed traveling-wave field effect transistors; printed-circuit boards; Attenuation; Capacitance; Inductors; Logic gates; Monitoring; Oscillators; Transistors; Composite right- and left-handed transmission lines; Left-handed waves; Traveling-wave field effect transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
Type :
conf
Filename :
5728323
Link To Document :
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