DocumentCode
540445
Title
Complete electromagnetic simulation of HEMT switch circuit
Author
Zhu, Yu ; Wei, Cejun ; Nohra, George ; Zhang, Cindy ; Klimashov, Oleksiy ; Yin, Hong ; Bartle, Dylan
Author_Institution
Skyworks Solutions Inc., Woburn, MA, USA
fYear
2010
fDate
7-10 Dec. 2010
Firstpage
2315
Lastpage
2318
Abstract
Electromagnetic (EM) only HEMT model was been proposed in. In this paper, complete EM simulation has been performed on entire switch circuit. The dependences of switch performances on distributed and coupling effects can be quantitatively explained, and the prediction accuracy can be remarkably improved. Further, the EM simulation has been applied to an assembled switch with bond wires. Since a closed loop is formed by bond wires and the shunt HEMT at off switch arm, isolation is degraded when loop currents is induced by the coupling among bond wires. It has been noticed that there are two kinds of couplings, and the loop currents induced by these two couplings are in the opposite phase. The isolation degradation can be reduced or eliminated by current cancellation when the bond wire configuration is properly designed.
Keywords
high electron mobility transistors; switched current circuits; HEMT switch circuit; bond wires; complete electromagnetic simulation; coupling effects; current cancellation; Couplings; HEMTs; Insertion loss; Integrated circuit modeling; Switches; Switching circuits; Wires; Electromagnetic analysis; HEMT; MMICs; modeling; simulation; switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location
Yokohama
Print_ISBN
978-1-4244-7590-2
Electronic_ISBN
978-1-902339-22-2
Type
conf
Filename
5728324
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