DocumentCode :
540445
Title :
Complete electromagnetic simulation of HEMT switch circuit
Author :
Zhu, Yu ; Wei, Cejun ; Nohra, George ; Zhang, Cindy ; Klimashov, Oleksiy ; Yin, Hong ; Bartle, Dylan
Author_Institution :
Skyworks Solutions Inc., Woburn, MA, USA
fYear :
2010
fDate :
7-10 Dec. 2010
Firstpage :
2315
Lastpage :
2318
Abstract :
Electromagnetic (EM) only HEMT model was been proposed in. In this paper, complete EM simulation has been performed on entire switch circuit. The dependences of switch performances on distributed and coupling effects can be quantitatively explained, and the prediction accuracy can be remarkably improved. Further, the EM simulation has been applied to an assembled switch with bond wires. Since a closed loop is formed by bond wires and the shunt HEMT at off switch arm, isolation is degraded when loop currents is induced by the coupling among bond wires. It has been noticed that there are two kinds of couplings, and the loop currents induced by these two couplings are in the opposite phase. The isolation degradation can be reduced or eliminated by current cancellation when the bond wire configuration is properly designed.
Keywords :
high electron mobility transistors; switched current circuits; HEMT switch circuit; bond wires; complete electromagnetic simulation; coupling effects; current cancellation; Couplings; HEMTs; Insertion loss; Integrated circuit modeling; Switches; Switching circuits; Wires; Electromagnetic analysis; HEMT; MMICs; modeling; simulation; switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
Type :
conf
Filename :
5728324
Link To Document :
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