• DocumentCode
    540445
  • Title

    Complete electromagnetic simulation of HEMT switch circuit

  • Author

    Zhu, Yu ; Wei, Cejun ; Nohra, George ; Zhang, Cindy ; Klimashov, Oleksiy ; Yin, Hong ; Bartle, Dylan

  • Author_Institution
    Skyworks Solutions Inc., Woburn, MA, USA
  • fYear
    2010
  • fDate
    7-10 Dec. 2010
  • Firstpage
    2315
  • Lastpage
    2318
  • Abstract
    Electromagnetic (EM) only HEMT model was been proposed in. In this paper, complete EM simulation has been performed on entire switch circuit. The dependences of switch performances on distributed and coupling effects can be quantitatively explained, and the prediction accuracy can be remarkably improved. Further, the EM simulation has been applied to an assembled switch with bond wires. Since a closed loop is formed by bond wires and the shunt HEMT at off switch arm, isolation is degraded when loop currents is induced by the coupling among bond wires. It has been noticed that there are two kinds of couplings, and the loop currents induced by these two couplings are in the opposite phase. The isolation degradation can be reduced or eliminated by current cancellation when the bond wire configuration is properly designed.
  • Keywords
    high electron mobility transistors; switched current circuits; HEMT switch circuit; bond wires; complete electromagnetic simulation; coupling effects; current cancellation; Couplings; HEMTs; Insertion loss; Integrated circuit modeling; Switches; Switching circuits; Wires; Electromagnetic analysis; HEMT; MMICs; modeling; simulation; switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
  • Conference_Location
    Yokohama
  • Print_ISBN
    978-1-4244-7590-2
  • Electronic_ISBN
    978-1-902339-22-2
  • Type

    conf

  • Filename
    5728324