Title :
D-band 3.6-dB-insertion-loss ASK modulator with 19.5-dB isolation in 65-nm CMOS technology
Author :
Yodprasit, Uroschanit ; Fujimoto, Ryuichi ; Motoyoshi, Mizuki ; Takano, Kyoya ; Fujishima, Minoru
Author_Institution :
Grad. Sch. of Adv. Sci. of Matter, Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
A compact and low-insertion-loss amplitude-shifted keying (ASK) modulator suitable for operations in D-band (110 GHz - 170 GHz) has been designed and successfully integrated with a 65-nm CMOS technology. The structure of the modulator is a transmission-line type single-pole-single-throw (SPST) switch. To minimize the insertion loss, a single section of a transmission line is used with two shunt transistors. The modulator exhibits an insertion loss of lower than 3.6 dB, measured without de-embedding, and an isolation of higher than 19.5 dB in the D band. The transient behavior of the modulator has been characterized by using a pulse generator, revealing an operation suitable for over-1Gbps applications.
Keywords :
CMOS integrated circuits; amplitude shift keying; microwave switches; pulse generators; ASK modulator; CMOS technology; SPST switch; amplitude-shifted keying; frequency 110 GHz to 170 GHz; insertion loss; pulse generator; shunt transistor; size 65 nm; transmission-line type single-pole-single-throw; Amplitude shift keying; Insertion loss; Loss measurement; Power transmission lines; Transistors; Transmission line measurements; ASK modulation; ASK modulator; SPST switch; millimeter-wave application; transceiver; transmitter;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2