Title :
Distortion reduction of a GaN HEMT Doherty power amplifier with a series connected load
Author :
Kawai, Satoshi ; Takayama, Yoichiro ; Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution :
Univ. of Electro-Commun., Chofu, Japan
Abstract :
Doherty introduced two types of concepts for high-efficiency linear amplifiers in 1936. One has a shunt connected load and the other has a series connected load. We fabricated a 1.9 GHz GaN HEMT Doherty power amplifier with a series connected load using baluns. The amplifier realized high power efficiency with a wide dynamic range in comparison with a conventional push-pull amplifier. In this paper, we propose distortion reduction method for the amplifier and achieved reduction of the third-order intermodulation distortion (IMD3) more than 15 dB at the output power from 5 to 20 dBm. The amplifier realized power-added efficiency (PAE) of 31% at the output power of 24 dBm at 10 dB input backoff from the saturated output power of 31 dBm with PAE of 58%.
Keywords :
III-V semiconductors; baluns; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; GaN; HEMT Doherty power amplifier; baluns; distortion reduction; frequency 1.9 GHz; high efficiency linear amplifiers; power added efficiency; push-pull amplifier; series connected load; third-order intermodulation distortion; Gallium nitride; HEMTs; Impedance; Logic gates; Power amplifiers; Power generation; Radio frequency; Doherty amplifier; GaN HEMT; baluns; intermodulation distortion; microwave power amplifiers; series connected load type;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2