DocumentCode :
540533
Title :
A miniaturized V-band bandpass filter using integrated passive devices technology
Author :
Lin, Wei-Chih ; Shen, Tze-Min ; Chen, Chih-Feng ; Huang, Ting-Yi ; Wu, Ruey-Beei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
2010
fDate :
7-10 Dec. 2010
Firstpage :
1170
Lastpage :
1173
Abstract :
A miniaturized and low-insertion-loss V-band bandpass filter implemented on the integrated passive device (IPD) is demonstrated. The architecture is composed of two quarter-wavelength transmission lines with vias, which form the two spiral-type resonators. Then, aperture compensation technique is applied to enhance the coupling between two resonators. The filter exhibits low insertion loss around 1.478dB, return loss around 21.35dB, center frequency at 55.85GHz, FBW about 11%, and extra transmission zeros at 35.1GHz and 61.5GHz. Most important of all, the filter only occupies the area of 342μm × 222μm or 0.071λg × 0.046λg (excluding the two feeding lines) on the glass substrate. To the authors´ knowledge, this is the most miniaturized filter ever reported for a V-band IPD bandpass filter in the literature.
Keywords :
band-pass filters; millimetre wave filters; SiO2; V-band bandpass filter; glass substrate; integrated passive devices technology; low-insertion-loss bandpass filter; spiral-type resonators; Argon; CMOS integrated circuits; CMOS technology; Microwave circuits; Radio frequency; IPD; V-band; bandpass filters; integrated passive device;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
Type :
conf
Filename :
5728414
Link To Document :
بازگشت