DocumentCode
540581
Title
Directional couplers from 30 to 140GHz in silicon
Author
Laemmle, Benjamin ; Schmalz, Klaus ; Scheytt, Christoph ; Koelpin, Alexander ; Weigel, Robert
Author_Institution
Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany
fYear
2010
fDate
7-10 Dec. 2010
Firstpage
806
Lastpage
809
Abstract
In this paper directional couplers with reduced size, by lumped elements, inverted microstrip, and broadside coupled lines at 61, 110, and 122 GHz center frequency and up to 156-GHz bandwidth have been designed. The couplers show an isolation up to 40 dB. Different SiGe BiCMOS technologies with 250-nm and 130-nm feature width and 5 to 7 metal layers have been used. The measurement results have been compared to simulation results and good agreement has been observed.
Keywords
BiCMOS integrated circuits; directional couplers; silicon compounds; SiGe BiCMOS technologies; bandwidth 156 GHz; broadside coupled lines; directional couplers; frequency 30 GHz to 140 GHz; inverted microstrip; lumped elements; reduced size; silicon; size 130 nm; size 250 nm; Conductors; Directional couplers; Frequency measurement; Metals; Microstrip; Silicon; millimeter wave directional couplers; passive circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location
Yokohama
Print_ISBN
978-1-4244-7590-2
Electronic_ISBN
978-1-902339-22-2
Type
conf
Filename
5728463
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