Improving High-Frequency Characteristics of Graphene FETs by Field-Controlling Electrodes

Author

Al-Amin, C. ; Vabbina, Phani Kiran ; Karabiyik, Mustafa ; Sinha, Roopak ; Pala, Nezih ; Wongbong Choi

Author_Institution

Dept. of Electr. & Comput. Eng., Florida Int. Univ., Miami, FL, USA

Volume

34

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

1193

Lastpage

1195

Abstract

We propose and extensively analyze a novel graphene-FET (GFET) with two capacitively coupled field-controlling electrodes (FCE) at the access region. The dc and RF characteristics of the proposed device are studied using analytical and numerical techniques and compared with the baseline designs. The independently biased FCEs could control the electric field and sheet carrier concentration at the ungated region, and thus reduce the access resistance effectively. The reduction of source/drain access resistance results in improved fT and fMAX compared with those of conventional GFETs of the same geometry. The proposed device with improved characteristics of GFET can be used for high-frequency applications.

Keywords

electric fields; field effect transistors; graphene; numerical analysis; FCE; GFET; RF characteristics; baseline design; capacitively coupled field-controlling electrodes; dc characteristics; electric field control; field-controlling electrode; graphene FET; high-frequency characteristics; numerical technique; sheet carrier concentration; source-drain access resistance reduction; ungated region; Field effect transistors; Graphene; Logic gates; Performance evaluation; Radio frequency; Resistance; $f_{T}$ and $f_{rm MAX}$; Current gain; graphene; graphene FET (GFET);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2272071

Filename

6566016